Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-07-07
1995-05-16
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, 117 88, C30B 2508
Patent
active
054151279
ABSTRACT:
Disclosed herein is a method of forming a single crystal film of sodium-beta"-alumina, comprising the steps of providing a single crystal substrate with one surface being arranged to minimize nucleation sites thereon, at least a portion of the substrate including alumina. A single crystal substrate is then deposited in a chamber, along with a precursor in the chamber. The precursor has a sufficient quantity of sodium species in a vapor phase and at an energy level sufficient to react with the alumina to form sodium-beta"-alumina. The precursor also includes a sufficient quantity of a stabilizing ion with a valence equal to or lower than aluminum to minimize decomposition of sodium-beta"-alumina to sodium-beta-alumina.
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Chemical Abstracts vol. 107, 1987 No. 124803.
Kuo Chu K.
Nicholson Patrick S.
Tan Aichun
Breneman R. Bruce
Garrett Felisa
O'Rourke Thomas A.
Ontario Centre For Materials Research
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