Method of forming a SIMOX structure

Details Method of forming a SIMOX structure Method of forming a SIMOX structure

1990-04-02

1994-05-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437 26, H01L 21265, H01L 2176

Patent

active

053106890

ABSTRACT:
A SIMOX structure having a reduced number of defects is formed by performing a two step anneal. In one embodiment, a conventional anneal is followed by an H.sub.2 /Si anneal. The conventional anneal first densifies the buried oxide layer in order to make the oxide less reactive with hydrogen. The H.sub.2 /Si anneal forms a quasi-equilibrium at the superficial semiconductor layer surface, thus there is no etching of the silicon surface and there is only a negligible amount of silicon deposition. The H.sub.2 reacts with the oxide precipitates and dissolves them. In a second embodiment the two step anneal comprises a low temperature H.sub.2 anneal followed by a conventional anneal. At low temperature, H.sub.2 can diffuse through silicon, but is much less reactive. Thus, etching of the superficial silicon and silicon dioxide buried layer is minimal. The conventional anneal is at a higher temperature, thus H.sub.2 can react with the oxygen precipitates to remove them.

REFERENCES:
patent: 4863878 (1989-09-01), Hite
patent: 4948742 (1990-08-01), Nishimura
patent: 4975126 (1990-12-01), Margail
Mizuno et al., "Effective Removal of Oxygen from Si Layer on Buried Oxide by Implantation of Hydrogen", J. Appl. Phys. 62(6), Sep. 15, 1987, pp. 2566-2568.
Hemment et al. "Nucleation and Growth of SiO.sub.2 Precipitates In SOI/SIMOX Related Materials". . . , Nuclear Instruments and Methods in Physics Research, B39, 1989, 210-214.
Wolf, "Silicon Processing for the VLSI Era", Lattice Press, 1986, pp. 133-136 and 305-308.

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