Method of forming a silicon semiconductor device using doping du

Details Method of forming a silicon semiconductor device using doping du Method of forming a silicon semiconductor device using doping du

1995-02-06

1997-03-18

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437192, 437200, H01L 21265, H01L 2144, H01L 2148

Patent

active

056122365

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a main surface, and a laminated structure. The laminated structure is made up of a nonmonocrystalline silicon layer and a layer of refractory metal or refractory metal silicide, formed on the nonmonocrystalline silicon layer, and formed on the main surface of the semiconductor substrate. The resistivity of the nonmonocrystalline silicon layer is set at less than substantially 1.times.10.sup.-2 .OMEGA..multidot.cm by doping an impurity thereinto at the time of deposition of the nonmonocrystalline silicon layer.

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