Method of forming a silicon nitride layer

Details Method of forming a silicon nitride layer Method of forming a silicon nitride layer

2007-06-12

2007-06-12

Fourson, George (Department: 2823)

Coating apparatus

Gas or vapor deposition

C427S096100, C427S096800, C427S100000, C118S504000, C118S720000, C118S7230AN

Reexamination Certificate

active

10710193

ABSTRACT:
A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

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patent: 7084724 (2006-08-01), Cetiner et al.
patent: 2005/0062653 (2005-03-01), Cetiner et al.

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