Method of forming a silicon nitride article

Details Method of forming a silicon nitride article Method of forming a silicon nitride article

1977-12-09

1978-11-14

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

106 735, 264 64, 264 65, 264 66, C01B 2106

Patent

active

041255925

ABSTRACT:
A method for forming a silicon nitride article is set forth. An article having silicon particles therein is formed in a manner which provides a degree of porosity for the article. The silicon particles of the article are reactable with nitrogen to form silicon nitride. The article is heated to a temperature below a significant reaction temperature at which nitrogen gas reacts with the silicon particles at a measurable rate. The article is surrounded with an atmosphere containing nitrogen gas. A reaction zone is established on at least a portion of the surface area of the article. The reaction zone has a temperature above the significant reaction temperature whereby the silicon particles in the reaction zone are reacted at a measurable rate with the nitrogen gas to form silicon nitride. The reaction zone is moved in a controlled manner from the surface of the article into the interior of the article whereby the article is progressively nitrided inwardly into its bulk from the surface thereof.

REFERENCES:
patent: 3726643 (1973-04-01), Merzhana et al.

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