Fishing – trapping – and vermin destroying
Patent
1995-01-23
1996-04-30
Silverberg, Sam
Fishing, trapping, and vermin destroying
437239, H01L 21265
Patent
active
055125190
ABSTRACT:
The present invention provides a method of forming an insulating layer of a semiconductor device, in which an oxide layer having an optimum nitrogen concentration and also a sufficient thickness may be grown by independently regulating the flow rate of NO and O.sub.2 gas and supplying the NO and O.sub.2 gas to a reaction chamber. This method is such that the NO and O.sub.2 gas is supplied to the chamber by regulating the NO and O.sub.2 gas, while maintaining the inside of the chamber at a temperature of about 750.degree. C. to 1050.degree. C. for a predetermined time, wherein nitrogen is included in a Si/SiO.sub.2 interface.
REFERENCES:
patent: 5244843 (1993-09-01), Chau
patent: 5397720 (1995-03-01), Kwong
Hyunsang Hwang, et al.; "Electrical and Reliability Characteristics of Ultrathin Oxynitride Gate Dielectric Prepared by Rapid Thermal Processing in N.sub.2 O"; 1990 IEEE; pp. 421-424.
Hyunsang Hwang, et al.; "Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N.sub.2 O"; 1990 American Institute of Physics; Sep. 1990; pp. 1010-1011.
Philip J. Tobin, et al.; "Silicon Oxynitride Formation in Nitrous Oxide (N.sub.2 O): The Role of Nitric Oxide (No)"; 4b-5; pp. 51-52.
Goldstar Electron Co. Ltd.
Loudermilk Alan R.
Silverberg Sam
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