Method of forming a silicon-based semiconductor optical device m

Details Method of forming a silicon-based semiconductor optical device m Method of forming a silicon-based semiconductor optical device m

1990-04-16

1991-06-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437206, 437180, 437 2, 437 3, 437905, 437906, 148DIG99, 148DIG168, H01L 2100

Patent

active

050249665

ABSTRACT:
A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser, and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips are coupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance Z.sub.L, and a stripline designed to have an impedance Z.sub.S, the resistance R is chosen such that R+Z.sub.L =Z.sub.S. Utilizing silicon processing techniques, the thin film resistor may be placed adjacent to the laser, reducing the parasitics associated with their interconnection. A conductive via is formed through the substrate to provide a top-side bonding location for connecting the optical device to the bottom metal conductor by providing the top-side site, the parasitic inductance associated with this interconnection is considerably reduced.

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