Method of forming a shared global word line MRAM structure

Details Method of forming a shared global word line MRAM structure Method of forming a shared global word line MRAM structure

2005-08-09

2005-08-09

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C365S171000

Reexamination Certificate

active

06927092

ABSTRACT:
A method of forming a shared global word line MRAM structure is disclosed. The method includes, etching a trench in an oxide layer formed over a substrate, depositing an first liner material, anisotropically etching the deposited first liner material leaving the first liner material on edges of the trench and physically contacting a bottom of the trench, depositing an magnetic metal liner material, anisotropically etching the deposited magnetic metal liner material leaving the magnetic metal liner material over the first liner material on edges of the trench, so that the magnetic metal liner extends to and physically contacts the bottom of the trench, depositing a conductive layer;, and chemically, mechanically polishing the conductive layer.

REFERENCES:
patent: 6413788 (2002-07-01), Tuttle
patent: 6548849 (2003-04-01), Pan et al.

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