Method of forming a shallow trench isolation that has rounded an

Details Method of forming a shallow trench isolation that has rounded an Method of forming a shallow trench isolation that has rounded an

1996-09-30

2000-03-07

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438426, 438424, 438443, H01L 2176

Patent

active

060339691

ABSTRACT:
A method is provided for forming a shallow trench isolation that has rounded and protected corners by first forming a bird's beak field oxide layer prior to the trench-forming step such that a rounded and protected top corner and a rounded bottom corner of the trench can be formed. The rounded top and bottom corners of the shallow trench opening have a radius of at least 100 .ANG. and a trench depth of not more than 5000 .ANG.. The top corner of the trench opening is protected by the beak portion of the bird's beak against etching in a subsequent oxide dip process before gate formation.

REFERENCES:
patent: 5350941 (1994-09-01), Madan

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