Method of forming a shallow trench isolation structure in a...

Details Method of forming a shallow trench isolation structure in a... Method of forming a shallow trench isolation structure in a...

2007-09-04

2007-09-04

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S700000, C438S738000, C438S744000, C438S757000

Reexamination Certificate

active

11024517

ABSTRACT:
An isolation method in a semiconductor device is disclosed. The example method sequentially forms a pad oxide layer and a pad nitride layer on a semiconductor substrate, patterns the pad nitride and oxide layers to form an opening exposing a portion of the substrate, and forms a trench in exposed portion of the substrate. The example method also etches the patterned pad nitride layer to extend the opening, carries out SAC oxidation on the extended opening and the trench to provide a rounded corner to an upper corner of the substrate in the vicinity of the trench, and fills the trench with an insulating layer.

REFERENCES:
patent: 6417070 (2002-07-01), Ballantine et al.
patent: 6541382 (2003-04-01), Cheng et al.

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