Method of forming a shallow trench isolation structure

Details Method of forming a shallow trench isolation structure Method of forming a shallow trench isolation structure

1997-02-25

1998-02-24

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438221, 438296, 438788, 438759, H01L 2176

Patent

active

057211736

ABSTRACT:
A method of forming a trench isolation structure is provided in which a film is formed on a semiconductor substrate and a trench is formed in the semiconductor substrate through the film. A dielectric material is deposited in the trench and on the film. An etch resistant film is formed on the portions of the dielectric material in the trench and on exposed portions of the film at edge regions of the trench. The dielectric material on the film is selectively removed and the etch resistant film remaining on the dielectric material in the trench is selectively removed.

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Nesbit et al., "A 0.6.mu.m.sub.2 256 Mb Trench DRAM Cell With Self-Aligned BuriEd STrap (BEST)", IEDM 1993, pp. 627-630.

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