Method of forming a shallow junction by diffusion from a silicon

Details Method of forming a shallow junction by diffusion from a silicon Method of forming a shallow junction by diffusion from a silicon

1996-08-26

1998-01-20

Dutton, Brian

Fishing, trapping, and vermin destroying

437 40, 437160, 437162, H01L 21265, H01L 21225, H01L 21385

Patent

active

057100543

ABSTRACT:
A method of forming a shallow junction in an IGFET is disclosed. The method includes forming a gate insulator on a semiconductor substrate of first conductivity type, forming a gate electrode on the gate insulator, forming a sidewall insulator on an edge of the gate electrode, forming a silicon-based spacer over the substrate such that the sidewall insulator separates and electrically isolates the spacer and the gate electrode, and diffusing a dopant of second conductivity type from the spacer into the substrate. The diffused dopant forms a shallow region of second conductivity type in the substrate, and a shallow junction is substantially laterally aligned with the edge of the gate electrode.

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patent: 5391508 (1995-02-01), Matsuoka et al.
patent: 5457060 (1995-10-01), Chang
patent: 5466958 (1995-11-01), Kakuma
patent: 5504031 (1996-04-01), Ching-Hsiang et al.
patent: 5559049 (1996-09-01), Cho
patent: 5591650 (1997-01-01), Hsu et al.

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