Method of forming a shallow and high conductivity boron doped la

Details Method of forming a shallow and high conductivity boron doped la Method of forming a shallow and high conductivity boron doped la

1982-10-15

1984-06-26

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 2, 357 91, H01L 21265

Patent

active

044564899

ABSTRACT:
Implanting, with low energy (e.g. 75 Kev and below), a dose of boron difluoride (BF.sub.2) into an area on a silicon substrate which is post-damaged or pre-damaged by a silicon implant so that annealing, or activation, can be accomplished at temperatures in the range of 550.degree. C. to 900.degree. C.

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patent: 4240096 (1980-12-01), Hiraki et al.
patent: 4391651 (1983-07-01), Yoder
Blood et al., Jour. Appl. Phys. 50 (1979) 173.
Kerkov et al., Phys. Stat. Solidi, 70a (Apr. 1982) 489.
Ryssel et al. in Ion Implantation in S/C-, Ed. B. Crowder, Plenum, N.Y. 1973, p. 215.
Suni et al., Thin Solid Films, 93 (Jul. 1982) 171.
Tsai et al., Jour. Appl. Phys. 50 (1979) 188.
Crowder, J. Electrochem. Soc. 117 (1970) 671.

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