Method of forming a semiconductor structure

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437190, 437193, 437913, 437983, 4272553, 357 49, 156643, H01L 2708

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047229128

ABSTRACT:
A method for forming a layer of silicon dioxide over a silicon island on an insulating surface wherein the layer on top of the island is thinner than on the sidewalls is disclosed. The silicon island is oxidized and a silicon layer is deposited thereover. The layer of silicon is oxidized and the oxide layer is anisotropically etched until the top surface of the island is exposed, leaving oxide only on the sidewalls of the island. The exposed portion of the island is then oxidized to form a thin layer of gate oxide thereon. A conductive polycrystalline silicon electrode is deposited on the oxide-covered island. The disclosed method is particularly useful in the formation of MOSFETs.

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