Method of forming a semiconductor structure

Details Method of forming a semiconductor structure Method of forming a semiconductor structure

1986-04-28

1987-04-21

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29576E, 29576T, 156668, 156657, 156643, 148DIG150, H01L 21473

Patent

active

046584951

ABSTRACT:
A method for forming a layer of silicon dioxide over a silicon island on an insulating surface wherein the layer on top of the island is thinner than on the sidewalls is disclosed. The silicon island is oxidized and a silicon layer is deposited thereover. A layer of planarizing material is deposited over the silicon layer. The planarizing layer is anisotropically etched until the surface of the silicon layer overlying the island is exposed. The silicon layer is in turn etched until the surface of the oxide layer overlying the island is exposed. The remaining planarizing material is removed and the remaining silicon layer is oxidized. The thickness of the gate oxide layer on top of the island may be controlled by again exposing the island surface and reoxidizing to a predetermined thickness. A conductive polycrystalline silicon electrode is deposited on the oxide-covered island. The disclosed method is particularly useful in the formation of MOSFETs.

REFERENCES:
patent: 4174217 (1979-11-01), Flatley
patent: 4242156 (1980-12-01), Peel
patent: 4545852 (1985-10-01), Barton
patent: 4604304 (1986-08-01), Faraone et al.

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