Method of forming a semiconductor phosphor layer by...

Details Method of forming a semiconductor phosphor layer by... Method of forming a semiconductor phosphor layer by...

2006-10-10

2006-10-10

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S045000, C438S046000, C438S029000

Reexamination Certificate

active

07118928

ABSTRACT:
Light-emitting devices having a semiconductor phosphor layer formed by metalorganic chemical vapor deposition (MOCVD). The semiconductor phosphor layer may be any Group III nitride semiconductor compound that is in-situ doped during MOCVD deposition with one or more dopants effective to act as luminescent centers. The MOCVD deposition conditions required for the formation of these extrinsic luminescent films differ significantly from the MOCVD deposition conditions utilized to deposit intrinsic GaN luminescent films.

REFERENCES:
patent: 5505986 (1996-04-01), Velthaus et al.
patent: 6140669 (2000-10-01), Lozykowski et al.
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6277664 (2001-08-01), Lozykowski et al.
patent: 6406930 (2002-06-01), Birkhahn et al.
patent: 6686489 (2004-02-01), Celinska et al.
patent: 2002/0158569 (2002-10-01), Wakahara et al.
patent: 2004/0262630 (2004-12-01), Kitaoka et al.
L.C. Chao, B.K. Lee, C.J. Chi, J. Cheng, I. Chy and A.J. Steckl,Rare earth focused ion beam implantation utilizating Er and Pr liquid alloy ion sources,J. Vac. Sci. Technol. B17(6), Nov./Dec. 1999, pp. 2791-2794.
K. Hara, N. Ohtake and K. Ishii,Green Emission from Tb-Doped GaN Grown by MOVPE,Phys. Stat. Sol. B216, 625-628 (1999).
A.J. Steckl, J. Keikenfeld and D.S. Lee,Rare-Earth-Doped GaN Phosphors for Electroluminescent Displays,2001 Emissive Displays Conference/San Diego, pp. 95-98 (Nov. 2001).
J.M. Zavada, U. Hommerich and A.J. Steckl,Light Emission from Rare Earth-Doped GaN, in III-Nitride Semiconductors Optical Properties I,H. Jiang and M.O. Manasreh, Eds., Optoelectronic Properties of Semiconductors and Superlattices, vol. 13, Chap. 9, pp. 379-409 (2002).
Andrew J. Steckl, Jason C. Heik nfeld, Dong-Seon L e, Michael J. Garter, Christopher C. Baker, Yongqiang Wang, and Robert Jones,Rare-Earth-Doped GaN: Growth, Properties, and Fabrication of Electroluminescent Devices,IEEE Journal of Selected Topics in Quantum Electronics, vol. 8, No. 4, pp. 749-766 (Jul./Aug. 2002).
A.J. Steckl and J.M. Zavada,Optoelectronic Properties and Applications of Rare-Earth-Doped GaNMRS Bulletin Sep. 1999, pp. 33-38.
D.S. Lee, J. Heikenfeld, R. Birkhahn, M. Garter, B.K. Lee and A.J. Steckl,Voltage-Controlled Yellow or Orange Emission from GaN Codoped with Er and Eu,Applied Physics Letters, vol. 76, No. 12, pp. 1525-1527 (Mar. 20, 2000).
A.J. Steckl, J. Heikenfeld, D.S. Lee, M. Garter,Multiple Color Capability from Rare Earth-Doped Gallium Nitride,Materials Science and Engineering B81 (2001), pp. 97-101.
D.M. Hansen, R. Zhang, N.R. Perkins, S. Safvi, L. Zhang, K.L. Bray, T.F. Kuech,Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,Appl. Phys. Letters, vol. 72, No. 10, pp. 1244-1246 (Mar. 9, 1998).
L.C. Chao and A.J. Steckl,Room-Temperature Visible and Infrared Photoluminescence from Pr-implanted GaN Films by Focused-Ion-Beam Direct White,Applied Physics Letters, vol. 74, No. 16, pp. 2364-2366 (Apr. 19, 1999).
J.K. Heikenfeld, M. Garter, D.S. Lee, R. Birkhahn and A.J. Steckl,Red light emission by photoluminescence and electroluminescence from Eu-doped GaN,Applied Physics Letters, vol. 75, No. 9, pp. 1189-1191 (Aug. 30, 1999).
A.J. Steckl and R. Birkhahn,Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy,Appl. Phys. Letters, vol. 73, No. 12, pp. 1700-1702 (Sep. 21, 1998).
A.J. Steckl, M. Garter, D.S. Lee, J. Helkenfeld, and R. Birkhahn,Blue emission from Tm-doped GaN electroluminescent devices,Applied Physics Letters, vol. 75, No. 15, pp. 2184-2186 (Oct. 11, 1999).

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