Method of forming a semiconductor memory device having silicon n

Details Method of forming a semiconductor memory device having silicon n Method of forming a semiconductor memory device having silicon n

1995-06-05

1996-05-21

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

055189474

ABSTRACT:
According to this invention, after a semiconductor nitride film is formed on the entire surface of a semiconductor memory device, the semiconductor nitride film on a memory cell portion is removed. After a semiconductor oxide-based film is formed as an interlayer insulator on the entire surface of the semiconductor memory device, the semiconductor oxide-based film on a peripheral circuit portion is removed using the semiconductor nitride film as a stopper. For this reason, a shallow contact hole is formed in the peripheral circuit portion, and highly reliable wiring can be obtained. In addition, since hydrogen can be supplied to a surface of a semiconductor substrate in the memory cell portion by hydrogen annealing, an interface state on the surface can be eliminated, and the data retention characteristics of the memory cells can be improved.

REFERENCES:
patent: 5158905 (1992-10-01), Ahn et al.
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5320976 (1994-06-01), Chin et al.

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