Method of forming a semiconductor memory device

Details Method of forming a semiconductor memory device Method of forming a semiconductor memory device

1998-03-03

2000-08-08

Garrett, Felisa

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438712, 438715, 438723, H01L 21302, H01L 21461

Patent

active

061002011

ABSTRACT:
A method of forming a capacitor by forming a dielectric layer over a bottom electrode layer, forming a top electrode layer over the dielectric layer to form laminations of the bottom electrode layer, the dielectric layer and the top electrode layer, and selectively etching the laminations to form a capacitor, the dielectric layer being etched by a reactive ion etching so that the dielectric layer of the capacitor receives no substantive damage in the etching process.

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