Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge
Patent
1989-10-30
1991-02-26
Valentine, Donald R.
Chemistry: electrical and wave energy
Processes and products
Electrostatic field or electrical discharge
20412975, C25F 312, C25F 314
Patent
active
049959530
ABSTRACT:
A semiconductor membrane is fabricated in a substrate by applying a voltage to a Schottky diode or a capacitor formed on a surface of the substrate to create a depletion region in the substrate. The substrate is exposed to an electrochemical, anisotropic etch solution. Etching terminates at the depletion region, thus forming a membrane having a thickness defined by the thickness of the depletion region.
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Kloeck et al., "A Novel Four Electrode Electrochemical Etch-Stop Method for Silicon Membrane Formation," Transducers '87, Japan, pp. 116-119.
Kloeck et al., "Study of Electrochemical Etch-Stop for High Precision Thickness Control of Silicon Membranes", IEEE Transactions on Electron Devices, vol. 36, No. 4, Apr. 1989, pp. 663-669.
Barbee Joe E.
Jackson Miriam
Motorola Inc.
Valentine Donald R.
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