Method of forming a semiconductor laser

Details Method of forming a semiconductor laser Method of forming a semiconductor laser

1989-01-27

1990-06-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG72, 148DIG84, 148DIG95, 437 22, 437133, 437987, H01L 2120, H01L 21203

Patent

active

049333011

ABSTRACT:
A method of making semiconductor laser arrays having an impurity disordered pattern of waveguides at least some of which are directly joined at branching junctions. The region near the branching junctions provides a phase boundary condition in which lightwaves propagating in adjacent waveguides are in phase. Using one impurity dose and one disordering depth in a first portion of the pattern and another in a second portion of the pattern provides a combination of strong and weak waveguiding with strong waveguides that eliminate evanescent coupling from occurring at least in the branching junction regions, and with weak guides near one or both end facets permitting evanescent coupling. The evanescent coupling between adjacent weak waveguides preserves the in phase relationship that was established in the Y-junction regions, resulting in a diffraction limited single lobe far field output. Alternatively, even without evanescent coupling, the modes can adjust their phases in the weak waveguides, where the propagation constant is less tightly specified by the geometry.

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