Method of forming a semiconductor device with a junction...

Details Method of forming a semiconductor device with a junction... Method of forming a semiconductor device with a junction...

2005-01-18

2005-01-18

Zarnela, Davil A. (Department: 2829)

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

C438S570000, C438S576000, C438S578000

Reexamination Certificate

active

06844251

ABSTRACT:
A method and apparatus are provided for improving a breakdown voltage of a semiconductor device. The method includes the steps of coupling an electrode of the silicon-carbide diode to a drift layer of the semiconductor device through a charge transfer junction, said drift layer being of a first doping type and providing a junction termination layer of a relatively constant thickness in direct contact with the drift layer of the semiconductor device and in direct contact with an outside edge of the charge transfer junction, said junction termination layer extending outwards from the outside edge of the charge transfer junction, said junction termination layer also being doped with a doping material of a second doping type in sufficient concentration to provide a charge depletion region adjacent the outside edge of the charge transfer junction when the charge transfer junction is reverse biased.

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