Method of forming a semiconductor device which prevents field co

Details Method of forming a semiconductor device which prevents field co Method of forming a semiconductor device which prevents field co

1993-02-22

1994-08-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 74, 437941, H01L 21265

Patent

active

053345460

ABSTRACT:
There is provided p diffusion regions (18a, 18b) in the surface of an end portion of the n island (7) formed on the p.sup.- substrate (12). The insulation film (14) is formed on the n island (7) to form therein conductive plates (16a-16e). The p diffusion regions (18a, 18b) and, the conductive plates (16a-16e) are alternately arranged and so aligned that adjacent pairs of end portions thereof overlap with each other. Capacitances of capacitive coupling of the conductive plates (16a-16e) and the p diffusion regions (18a, 18b) are optimized so that potentials of the conductive plates (16a-16e) and the p diffusion regions (18a, 18b) can substantially linearly change from a low level to a high level. Thus, the concentration of electric field can be prevented.

REFERENCES:
patent: 4021789 (1977-05-01), Furman et al.
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 5043781 (1991-08-01), Nishiura

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