Method of forming a semiconductor device utilizing scalpel mask,

Details Method of forming a semiconductor device utilizing scalpel mask, Method of forming a semiconductor device utilizing scalpel mask,

1997-11-03

1999-08-24

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049223, 430 5, 430296, H01J 3709

Patent

active

059427604

ABSTRACT:
A mask (300) for scattering angular limited projection electron beam lithography, including a substrate (102) having an opening (103) extending into the substrate, a membrane layer (204) extending over the substrate, the membrane layer including a window portion (209) that overlies an opening in the substrate and being formed of a material having a first electron scattering power, a patterned scattering layer overlying the membrane layer, at least along the window portion of the membrane layer, the patterned scattering layer being formed of a material having a second electron scattering power that is greater than the first electron scattering power, and an encapsulating layer (210) overlying the patterned scattering layer, the encapsulating layer having a third electron scattering power that is less than the second electron scattering power.

REFERENCES:
patent: 5130213 (1992-07-01), Berger et al.
patent: 5279925 (1994-01-01), Berger et al.
patent: 5616927 (1997-04-01), Kubota et al.
J.A.Liddle et al., "mask fabrication for projection electron-beam lithography incorporating the SCALPEL technique", J. Vac. Sci. Technol. B., vol. 9, No. 6 Nov./Dec. 1991, pp. 3001-3004.
S.D.Berger, et al, "Projection electron-beam lithography: A new approach", J.Vac.Sci. Technol. B, vol. 9, No. 6, Nov./Dec. 1991, pp. 2996-2999.

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