Method of forming a semiconductor device utilizing lithographic

Details Method of forming a semiconductor device utilizing lithographic Method of forming a semiconductor device utilizing lithographic

1998-07-30

2000-09-26

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, G03F 900

Patent

active

06124063&

ABSTRACT:
A method for patterning a semiconductor device using a lithographic mask (300) having a membrane layer (204) overlying an opening in a substrate. The membrane layer supports a scattering layer (208), and has a varying content of silicon through a thickness thereof, that is, along the direction that is normal to the substrate. In one embodiment, the content of silicon increases along the normal direction, outward from the substrate. The mask has improved durability and reduces occurrences of pinhole defects in the membrane layer.

REFERENCES:
patent: 4855197 (1989-08-01), Zapka et al.

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