Method of forming a semiconductor device on insulating substrate

Details Method of forming a semiconductor device on insulating substrate Method of forming a semiconductor device on insulating substrate

1982-09-24

1984-08-07

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576T, 148 15, 148187, 357 91, 427 531, H01L 21263, H01L 21225

Patent

active

044634927

ABSTRACT:
A method for manufacturing a semiconductor device of a type in which a semiconductor element is formed on an insulating substrate. After ions which break the regularity of the crystal lattice of a monocrystalline semiconductor layer formed on the insulating substrate are implanted to form an amorphous semiconductor layer in part of the monocrystalline semiconductor layer, and after an impurity is doped in the semiconductor layer, a single annealing process is performed to recrystallize the amorphous semiconductor layer and at the same time to activate the doped impurity.

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T. Yoshii et al., "Improvement of SOS Device Performance by Solid-Phase Epitaxy," Digest of Tech. Papers 13th Conference on Solid State Devices, pp. 79-80, (1981).

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