Method of forming a semiconductor device including...

Details Method of forming a semiconductor device including... Method of forming a semiconductor device including...

2005-07-19

2005-07-19

Chaudhuri, Olik (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Mesa or stacked emitter

C438S350000, C438S357000, C438S365000

Reexamination Certificate

active

06919253

ABSTRACT:
A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.

REFERENCES:
patent: 6100152 (2000-08-01), Emons et al.
patent: 6384469 (2002-05-01), Chantre
patent: 6699741 (2004-03-01), Sadovnikov et al.
patent: 2002/0104476 (2002-08-01), Ferguson et al.
patent: 09-186319 (1997-07-01), None

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