Method of forming a semiconductor device having dummy features

Details Method of forming a semiconductor device having dummy features Method of forming a semiconductor device having dummy features

2005-12-14

2010-06-22

Alanko, Anita K (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

C438S014000, C438S926000, C216S041000, C216S059000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

07741221

ABSTRACT:
A method for forming a semiconductor device includes providing a plurality of features in a layout, selecting critical features from the plurality of features, placing a first plurality of short-range dummy etch features in the layout at a first distance from the critical features to increase the feature density near the critical features, wherein each of the first plurality of short-range dummy etch features has a first width, removing at least one of the first plurality of short-range dummy etch features from the layout that will subsequently interfere with the electrical performance of at least one active feature so that a second plurality of short-range dummy etch features remains, and using the layout to pattern a layer on a semiconductor substrate.

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