Method of forming a semiconductor device having a metal layer

Details Method of forming a semiconductor device having a metal layer Method of forming a semiconductor device having a metal layer

2007-04-24

2007-04-24

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S734000, C438S963000, C257SE21310, C257SE21311, C257SE21313

Reexamination Certificate

active

10943383

ABSTRACT:
A metal layer is formed over a metal oxide, where the metal oxide is formed over a semiconductor substrate. A predetermined critical dimension of the metal layer is determined. A first etch is performed to etch the metal layer down to the metal oxide and form footings at the sidewalls of the metal layer. A second etch to remove the footings to target a predetermined critical dimension, wherein the second etch is selective to the metal oxide. In one embodiment, a conductive layer is formed over the metal layer. The bulk of the conductive layer may be etched leaving a portion in contact with the metal layer. Next, the portion left in contact with the metal layer may be etched using chemistry selective to the metal layer.

REFERENCES:
patent: 5948703 (1999-09-01), Shen et al.
patent: 6651678 (2003-11-01), Shintani et al.
patent: 6677244 (2004-01-01), Ono et al.
patent: 6794229 (2004-09-01), Asami et al.
patent: 2003/0148622 (2003-08-01), Shen et al.
http://www.clarycon.com/softlandingduria.html, “Softlanding During Gate Etching”, 2004.

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