Method of forming a semiconductor device having a capacitor and

Details Method of forming a semiconductor device having a capacitor and Method of forming a semiconductor device having a capacitor and

1995-03-31

1997-04-08

Tsai, Jey

Semiconductor device manufacturing: process

Making passive device

Resistor

148DIG14, 148DIG136, 438238, H01L 2170, H01L 2700

Patent

active

056187491

ABSTRACT:
A semiconductor integrated circuit including a MOSFET having a polycide gate structure, a resistor and a capacitor is monolithically manufactured. Polycrystalline silicon film, a dielectric film, and another polycrystalline silicon film are consecutively deposited. After processes of patterning and etching the dielectric film, the remaining dielectric films are used as an etching protection mask for the resistor and a capacitor. A refractory metal silicide for a polycide gate is uniformly deposited over the remaining another polycrystalline silicon films and dielectric films. The refractory metal silicide and polycrystalline silicon are consecutively etched through a patterned resist mask and the remaining dielectric films to simultaneously form the polycide gate, resistor and capacitor. Thus, a capacitor having small change in capacitance versus applied voltage is manufactured in a MOS IC device having a polycide gate.

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S.R. Nariani, et al., "Adding mixed-signal capability to a submicron digital ASIC process", Solid State Technology, Aug. 1994, pp. 79-83.

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