Method of forming a semiconductor device by using a conductive f

Details Method of forming a semiconductor device by using a conductive f Method of forming a semiconductor device by using a conductive f

1996-07-26

1999-04-06

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

438253, 438634, H01L 218242

Patent

active

058917624

ABSTRACT:
A manufacturing method for a semiconductor device, whereby poly-silicon serving as an etching stopper is formed above a redundant fuse at the same time as a cell plate is. A silicon nitride film, an oxide film, and another oxide film on the redundant fuse are consecutively etched using the poly-silicon as the etching stopper. Then the poly-silicon is etched.

REFERENCES:
patent: 4628590 (1986-12-01), Udo et al.
patent: 5578861 (1996-11-01), Kinoshita et al.
patent: 5618750 (1997-04-01), Fukuhara et al.

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