Method of forming a semiconductor device by activating regions w

Details Method of forming a semiconductor device by activating regions w Method of forming a semiconductor device by activating regions w

1994-02-03

1996-10-01

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 19, 437934, H01L 21306

Patent

active

055610811

ABSTRACT:
An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.

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"Enlargement of Poly-Sci Film Grain Size by Excimer Laser Annealing and Its Application To High-Performance Poly-Si Thin Film Transistor" Japanese Journal Of Applied Physics, vol. 30, No. 12B, Dec. 1991, pp. 3700-3703.
"Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant Microelectronics", Jpn. J. Appl. Phys., vol. 31 (1992) pp. 4550-4554, Pt. 1, No. 12B, Dec. 1992.

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