Method of forming a semiconductor device and structure therefor

Details Method of forming a semiconductor device and structure therefor Method of forming a semiconductor device and structure therefor

2002-04-15

2003-04-15

Wamsley, Patrick (Department: 2819)

Coded data generation or conversion

Analog to or from digital conversion

Digital to analog conversion

C341S120000

Reexamination Certificate

active

06549156

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates, in general, to electronics, and more particularly, to methods of forming semiconductor devices and structure.
In the past, the electronics industry utilized digital-to-analog converters in various electronic systems for many different types of applications. These digital-to-analog converters or DACs were precision circuits that were expected to have a highly precise analog output. Often, other circuits in a system induced various types of offsets that caused the output of the DAC to have errors that exceed the desired DAC tolerances. Two common offsets were ground reference offsets and power supply variations. In order to compensate for the ground reference errors, the ground connections of the receiving circuit and the DAC were physically connected together. Connecting a remote ground to the ground reference input of the DAC still did not achieve the desired precision of no less than 99.9 percent accuracy.
Accordingly, it is desirable to have a method of forming a DAC that reduces induced errors, that reduces ground reference errors, and that reduces the errors internal to the DAC.


REFERENCES:
patent: 4222107 (1980-09-01), Mrozowski et al.
patent: 5087914 (1992-02-01), Sooch et al.
patent: 6316992 (2001-11-01), Miao et al.
Semitech, SC1144, Programmable, High Performance Multi-Phase PWM Controller, Revision 1, Jan. 2001, 11 pages.

Affiliated with

Also associated with

Rating

Method of forming a semiconductor device and structure therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a semiconductor device and structure therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor device and structure therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3096076