Method of forming a semiconductor device

Details Method of forming a semiconductor device Method of forming a semiconductor device

1995-12-01

1998-02-10

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437913, H01L 21265

Patent

active

057168660

ABSTRACT:
A method for forming a unilateral, graded-channel field effect transistor and a transistor stock 200 that includes providing a substrate (10) with an overlying gate electrode (14, 16). A spacer (23) is formed on only the drain side of the electrode. A graded-channel region (36) is formed aligned to the source side of the electrode while the spacer protects the drain side of the channel region. Source/drain regions (38) are formed, the spacer is removed, and then a drain extension region (40) is formed aligned to the drain side of the electrode.

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patent: 5482878 (1996-01-01), Burger et al.
patent: 5491101 (1996-02-01), Miyamoto et al.

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