Method of forming a semiconductor component

Details Method of forming a semiconductor component Method of forming a semiconductor component

2005-03-29

2005-03-29

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C385S145000

Reexamination Certificate

active

06872253

ABSTRACT:
The invention relates to a method of forming a semiconductor component comprising the steps of:providing a semiconductor substrate,forming a pattern of pores in the semiconductor substrate, the pores having a first depth,photoassisted wet etching of the substrate for etching of the pores to a second depth, the second depth being substantially greater than the first depth.

REFERENCES:
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patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 5987208 (1999-11-01), Gruning et al.
patent: 100 11 253 (2001-09-01), None
patent: WO 9853351 (1998-11-01), None
patent: WO 9909439 (1999-02-01), None
patent: WO 9941626 (1999-08-01), None
Aimin Liu, “Microstructure and Photoluminescenxe Spectra of Porous InP”, Letter to the Editor, Institute of Physics Publishing, Nanotechnology 12, Aug. 20, 2001, pp. L1-L3.

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