Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1992-11-19
1995-05-16
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117 21, 117932, C30B 1104
Patent
active
054151252
ABSTRACT:
A method of forming a semiconductor boule comprises the steps of providing a chamber having a crucible therein; introducing a first material and a second material into the crucible, the second material overlying the first material; heating the crucible to melt the first and second materials for substantially continuously covering the first material with the second material during the melting of the first and second materials; cooling the melt to grow a directly synthesized boule; and separating the grown boule from the crucible. In another embodiment, the method comprises steps of providing a chamber having a crucible therein; charging a first and a second material for forming the boule and a liquid encapsulant into the crucible, the volume of the intergranular space of charged first material being smaller than the volume of the molten second material; heating the crucible to melt the first and second materials; cooling the molten materials to grow the boule; and separating the grown boule from the crucible.
REFERENCES:
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patent: 4404172 (1983-09-01), Gault
patent: 4734267 (1988-03-01), Kojimo
patent: 4840699 (1989-06-01), Khattak et al.
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patent: 5007980 (1991-04-01), Swiggand
patent: 5131975 (1992-07-01), Bourret-Courchesne
"Precise Melt Composition Control for LEC GaAs", Johji Nishio et al., Journal of Crystal Growth, 85:469-471 (1987).
Fujita Hiromoto
Nishio Johji
Breneman R. Bruce
Garrett Felisa
Kabushiki Kaisha Toshiba
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