Method of forming a self-gated transistor and structure...

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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C327S110000

Reexamination Certificate

active

10813501

ABSTRACT:
In one embodiment, a self-gated transistor includes a sensing portion that generates a sense signal that is used to drive the self-gated transistor.

REFERENCES:
patent: 5422593 (1995-06-01), Fujihira
patent: 5796278 (1998-08-01), Osborn et al.
patent: 5936440 (1999-08-01), Asada et al.
patent: 6545515 (2003-04-01), Takahashi et al.
patent: 6747880 (2004-06-01), Grover
patent: 2003/0197532 (2003-10-01), Tsuchida
Millman et al., Integrated Electronics: Analog and Digital Circuits and Systems, p. 568, fig. 16-33, 1972.

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