Method of forming a self-aligned bipolar transistor

Details Method of forming a self-aligned bipolar transistor Method of forming a self-aligned bipolar transistor

1992-02-03

1993-12-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 33, 437 70, 437917, 148DIG10, 148DIG11, H01L 21331

Patent

active

052683141

ABSTRACT:
A bipolar transistor device having reduced collector-base capacitance and advantageous extrinsic base resistance properties is fabricated by a self-aligned process. Successively formed first and second self-aligned masking spacers are utilized to define the collector-base junction area and to permit the conductivity of base link and base contact portions of the extrinsic base to be independently established.

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Cuthbertson et al., "Self-Aligned Transistors with Polysilicon Emitters for Bipolar VLSI", IEEE Transactions on Electronic Devices, vol. Ed-32, No.2, Feb. 1985, pp. 242-247.

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