Method of forming a second antiferromagnetic exchange-coupling l

Details Method of forming a second antiferromagnetic exchange-coupling l Method of forming a second antiferromagnetic exchange-coupling l

1999-10-12

2000-10-10

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427131, 427132, 427599, 428693, 428699, 428702, 428900, B29C 3508, H01F 100

Patent

active

06129957&

ABSTRACT:
A method of manufacturing a magnetoresistive head comprises forming a magnetoresistive structure with a magnetoresistive element with a first AFM element. Perform a first annealing step at a high temperature with a high magnetic field. Form the remaining MR structure including second AFM elements. Perform a low magnetic field (H.sub.ann) annealing step following the fabrication of the second AFM elements. Then perform a no externally applied field (H.sub.ann =0) annealing step at a high temperature to increase the H.sub.ex of the second AFM element to full strength, whereby the stability of the first AFM element is enhanced or increases its H.sub.ex if there were a decrease during the low magnetic field annealing step.

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patent: 5772794 (1998-06-01), Uno et al.
patent: 5856897 (1999-01-01), Mauri
patent: 5859753 (1999-01-01), Ohtsuka et al.

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