Method of forming a Schottky diode and structure therefor

Details Method of forming a Schottky diode and structure therefor Method of forming a Schottky diode and structure therefor

2006-07-14

2010-10-26

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

C257SE21359

Reexamination Certificate

active

07821095

ABSTRACT:
In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns.

REFERENCES:
patent: 4357178 (1982-11-01), Bergeron et al.
patent: 4692991 (1987-09-01), Flowers
patent: 4720734 (1988-01-01), Amemiya et al.
patent: 4899199 (1990-02-01), Gould
patent: 5060047 (1991-10-01), Jaume et al.
patent: 5075740 (1991-12-01), Ohtsuka et al.
patent: 5497311 (1996-03-01), Hanawaka
patent: 5614755 (1997-03-01), Hutter et al.
patent: 5859465 (1999-01-01), Spring et al.
patent: 6624472 (2003-09-01), Hurkx et al.
patent: 6660570 (2003-12-01), Kim et al.
Data Sheet: “NCP1205 Single Ended PWM Controller Featuring QR Operation and Soft Frequency Foldback”, © Semiconductor Components Industries, LLC, Oct. 2005, 2005—Rev. 6, 17pps.

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