Method of forming a resist pattern utilizing correlation between

Details Method of forming a resist pattern utilizing correlation between Method of forming a resist pattern utilizing correlation between

1995-11-13

1998-05-26

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430311, G03C 500, G03F 726

Patent

active

057562423

ABSTRACT:
A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found. Additionally, also from the second correlation, develop time corresponding to a target resist pattern linewidth and to an estimated exposure energy dose is found, and according to the develop time found, a resist pattern is formed.

REFERENCES:
patent: 4670650 (1987-06-01), Matsuzawa et al.
J. Sturtevant et al., "Use of Scatterometric Latent Image Detector in Closed Loop Feedback Control of Linewidth", SPIE vol. 2196, pp. 352-359.
Shoaib Zaidi, et. al, Metrology Sensors for Advanced Resists, p. 2196, vol. 2196, Feb. 28, 1994.
Sturtevant, et al., Post-Brake as a Process-Control Parameter for Chemically-Amplified Photoresist, pp. 106-114, vol. 1926, Mar. 2-4, 1993.

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