Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-17
2006-10-17
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S066000, C257S072000, C257S222000, C257S291000, C257SE29040, C257SE29147, C257SE29151, C257SE31101
Reexamination Certificate
active
07122831
ABSTRACT:
The present invention provides a method of forming a TFT and a reflective electrode having recesses or projections with reduced manufacturing cost and a reduced number of manufacturing steps, and provides a liquid crystal display device to which the method is applied. A photosensitive film8is formed on a metal film7. Then, remaining portions81, 82and83are formed from the photosensitive film8. Then, the metal film7is etched by using the remaining portions81, 82and83as masks. And then, a photosensitive film9and a reflective electrode film10are formed without removing the remaining portions81, 82and83.
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Birch Stewart Kolasch & Birch, LLP.
Soward Ida M.
TPO Displays Corp.
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