Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Reexamination Certificate
2008-04-08
2008-04-08
Chaney, Carol (Department: 1773)
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
C427S488000, C427S489000, C427S490000, C427S491000
Reexamination Certificate
active
11463781
ABSTRACT:
A method of forming a protective film that restrains gas adsorption while preserving durability and corrosion resistance of a plasma CVD carbon film is disclosed. A protective film of a slide-resistant member is deposited by means of a plasma CVD method using a raw material of hydrocarbon gas, wherein a bias voltage higher than −500 V is applied to the slide-resistant member in an initial stage of depositing the protective film, and a bias voltage of −500 V or lower is applied in a final stage of deposition. A proportion of time duration of the final stage is preferably at most 25% of the total time for depositing the protective film. A magnetic recording medium comprising a magnetic recording layer and a protective film formed by the method also is disclosed.
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Search Report issued in corresponding Singapore (Australia) patent application No. 2006-04694-0, dated Aug. 29, 2007.
Chaney Carol
Fuji Electric Device Technology Co. Ltd.
Harris Gary D.
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