Method of forming a printhead using a silicon on insulator...

Metal working – Method of mechanical manufacture – Fluid pattern dispersing device making – e.g. – ink jet

Reexamination Certificate

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C029S611000, C438S021000, C438S749000, C216S027000, C216S079000, C216S099000

Reexamination Certificate

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06938340

ABSTRACT:
Described herein is a method of forming a printhead. A silicon-on-insulator (SOI) substrate, including a first silicon layer, a second silicon layer, and an oxide layer between the first silicon layer and the second silicon layer, is provided. A plurality of thin film layers is formed on a first surface of the substrate. At least one of the layers forms a plurality of ink ejection elements. Ink feed holes are formed through the thin film layers. An opening is formed in the substrate by (a) etching the first silicon layer of the SOI substrate using a wet etch to etch a trench in the first silicon layer extending to the oxide layer; (b) etching an opening in the oxide layer; and (c) etching an opening in the second silicon layer to form an ink path between a backside of the SOI substrate and a topside of the SOI substrate.

REFERENCES:
patent: 4894664 (1990-01-01), Tsung Pan
patent: 5387314 (1995-02-01), Baughman et al.
patent: 5679593 (1997-10-01), Miller et al.
patent: 5682188 (1997-10-01), Meyer et al.
patent: 5706041 (1998-01-01), Kubby
patent: 5773326 (1998-06-01), Gilbert et al.
patent: 5851412 (1998-12-01), Kubby
patent: 5852459 (1998-12-01), Pawlowski, Jr. et al.
patent: 5876497 (1999-03-01), Atoji
patent: 5971527 (1999-10-01), Peeters et al.
patent: 6000787 (1999-12-01), Weber et al.
patent: 6033581 (2000-03-01), Kobayashi
patent: 6103099 (2000-08-01), Wittenbrink et al.
patent: 59-124871 (1984-07-01), None

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