Method of forming a polysilicon layer

Details Method of forming a polysilicon layer Method of forming a polysilicon layer

2007-12-04

2007-12-04

Fletcher, III, William Phillip (Department: 1762)

Coating processes

With post-treatment of coating or coating material

Heating or drying

C427S419200, C427S419700, C427S554000

Reexamination Certificate

active

10754406

ABSTRACT:
In a method of forming a polysilicon layer on a substrate, a first embodiment comprises: doping inert gas into the substrate to form a plurality of pores in the substrate; depositing a buffer later on the substrate; depositing an amorphous silicon layer on the buffer layer; and heating the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer. A second embodiment comprises: depositing a first buffer layer on a substrate; doping inert gas into the first buffer layer to form a plurality of pores in the first buffer layer; depositing a second buffer layer on the first buffer layer; depositing an amorphous silicon layer on the second buffer layer; and heating the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer.

REFERENCES:
patent: 5707888 (1998-01-01), Aronowitz et al.
Derwent Abstract for KR 2001097926 A.

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