Method of forming a polymer on a surface

Details Method of forming a polymer on a surface Method of forming a polymer on a surface

1999-04-15

2001-04-10

Pianalto, Bernard (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

C427S243000, C427S255600, C427S569000

Reexamination Certificate

active

06214423

ABSTRACT:

The invention relates to electronic semiconductor devices, and, more particularly, to dielectric structures and fabrication methods for such structures.
The performance of high density integrated circuits is dominated by metal interconnect level RC time delays and adjacent crosstalk due to the resistivity of the metal lines and the capacitive coupling between adjacent lines. The capacitive coupling can be reduced by decreasing the relative permittivity (dielectric constant, k) of the dielectric (insulator) between adjacent lines.
Various dielectric materials have been suggested for use in silicon integrated circuits; namely, silicon dioxide (k about 4.0), fluorinated silicon dioxide (k about 3.0-4.0), organic materials such as polyimide, parylene, amorphous teflon (k about 1.9-3.9), and porous dielectrics such as silicon dioxide xerogels (k dependent upon porosity and typically 1.3-3.0). The porosity can be up to 99% by volume.
Timmons and coworkers demonstrated the use of a variable duty cycle pulsed plasma enhanced vapor phase deposition provides a high level of film chemistry controllability during polymerization of various monomers, such as perfluoropropylene oxide. The generality of the approach has been shown for a wide variety of monomers. For example, Labelle et al, Characterization of Pulse-Plasma Enhanced Chemical Vapor Deposited Fluorocarbon Thin Films, 1997 DUMIC Conference Proceedings, pages 98-105, describe pulsed plasma enhanced vapor phase deposition of a fluorocarbon polymer from a hexafluoropropylene oxide monomer and cite the apparent lack of formation of dangling bonds in the polymer.
However, fluorocarbon polymers have not yet become manufacturable for integrated circuit dielectrics.
SUMMARY OF THE INVENTION
The present invention provides a polymer with narrow gap filling or porosity plus a polymer deposition process using pulse plasma enhanced deposition plus optional anneal.
This has a technical advantage of a low dielectric constant material for integrated circuit including interconnects with small gaps.


REFERENCES:
patent: 5232642 (1993-08-01), Kamo et al.
patent: 5876753 (1999-03-01), Timmons et al.
patent: 5932296 (1999-08-01), Sulka et al.
patent: 62-55859 (1987-11-01), None
patent: 363009907A (1988-01-01), None

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