Method of forming a piezoelectric layer in forming a...

Details Method of forming a piezoelectric layer in forming a... Method of forming a piezoelectric layer in forming a...

2006-11-21

2006-11-21

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S831000, C029S832000, C029S890100, C427S100000, C310S311000

Reexamination Certificate

active

07137179

ABSTRACT:
A method of forming a piezoelectric layer includes: a drying step for forming at least one ferroelectric precursor film on a lower electrode of a substrate and drying the ferroelectric precursor film; a degreasing step for carrying the substrate into a region facing a hot plate heated to a certain temperature and for degreasing the ferroelectric precursor film in a state where the substrate is supported by a proximity pin; and a baking step for further baking the degreased ferroelectric precursor film to form the degreased ferroelectric precursor film into a ferroelectric film. The piezoelectric layer is formed by repeating the drying, degreasing, and baking steps for the ferroelectric precursor film in a predetermined number of cycles. The degreasing step includes a step of adjusting a heating temperature of the ferroelectric precursor film by adjusting a distance between the hot plate and the substrate and by lowering a temperature of space on an opposite side of the substrate from the hot plate.

REFERENCES:
patent: 6140746 (2000-10-01), Miyashita et al.
patent: 6328433 (2001-12-01), Moriya et al.
patent: 6387225 (2002-05-01), Shimada et al.
patent: 6499837 (2002-12-01), Murai
patent: 6-181173 (1994-06-01), None

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