Method of forming a photosensor comprising a plurality of...

Details Method of forming a photosensor comprising a plurality of... Method of forming a photosensor comprising a plurality of...

2006-08-15

2006-08-15

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S080000

Reexamination Certificate

active

07091059

ABSTRACT:
A method of forming a multiple-trench photosensor for use in a CMOS imager having an improved charge capacity. The multi-trench photosensor may be either a photogate or photodiode structure. The multi-trench photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The multi-trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the multi-trench photosensor.

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