Method of forming a photomask material

Details Method of forming a photomask material Method of forming a photomask material

1987-06-22

1988-12-20

Buffalow, Edith

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

428 91, 430 5, B05D 306

Patent

active

047924616

ABSTRACT:
A silicide film of oxidized transition metal 3 formed on a transparent substrate 1 has a low reflectance and in consequence, a high resolution can be obtained and dry etching thereof can be easily done. In addition, since said silicide film 3 has good adhesion to a transparent substrate 1, file patterns therein do not peel off at the time of rinsing the mask.

REFERENCES:
patent: 4661426 (1987-04-01), Matsuda et al.
patent: 4678714 (1987-07-01), Watakabe

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