Method of forming a phosphorus-nitrogen-oxygen film on a substra

Details Method of forming a phosphorus-nitrogen-oxygen film on a substra Method of forming a phosphorus-nitrogen-oxygen film on a substra

1977-02-28

1979-10-23

Esposito, Michael F.

Coating processes

Electrical product produced

Condenser or capacitor

252 623R, 357 52, 427 82, 427126, 427248C, 427255, B05D 512

Patent

active

041721586

ABSTRACT:
A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400.degree.-900.degree. C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

REFERENCES:
patent: 3486951 (1969-12-01), Norby
patent: 3524776 (1970-08-01), Hampikian et al.
patent: 3660179 (1972-05-01), Desmond et al.
patent: 3666574 (1972-05-01), Tarneja et al.
patent: 3931039 (1976-01-01), Yamashita et al.

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