Method of forming a perovskite structure semiconductor capacitor

Details Method of forming a perovskite structure semiconductor capacitor Method of forming a perovskite structure semiconductor capacitor

1996-11-26

1999-03-09

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438253, 438240, H01L 218242

Patent

active

058799567

ABSTRACT:
A semiconductor capacitor structure is made from a fabrication method which includes a step for forming an insulation film having a contact hole so that a portion of a substrate is exposed therethrough. Thereafter, a composite first electrode composed of a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are formed on a portion of the insulation film including the contact hole. A Perovskite structure dielectric film is formed on the first electrode, and a Perovskite structure second electrode on the dielectric film is formed. The capacitor has a high dielectric constant approaching that of an epitaxial structure of a mono-crystalline substrate, and interfaces with more stabilized grain boundaries than those of a poly-crystalline structure. Hence, the reduction of trapped charge density between interfaces of the electrodes and dielectric films leads to a decreased leakage current and an improved TDDB (time-dependent direct breakdown) property.

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